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We report the epitaxial growth of (010) β-(AlxGa1−x)2O3 using tritertiarybutylaluminum (TTBAl) as an aluminum gas precursor in a hybrid molecular beam epitaxy (h-MBE) system. In conventional MBE systems, a thermal effusion cell is typically used to supply Al. However, in an oxide MBE system, using a conventional Al effusion cell can cause difficulties due to the oxidation of the Al source during growth. This often requires breaking the vacuum frequently to reload Al. Our approach utilizes TTBAl, a gaseous Al source, via a h-MBE to circumvent the oxidation issues associated with traditional solid Al sources. We investigated the growth conditions of β-(AlxGa1−x)2O3, varying TTBAl supply and growth temperature. For this purpose, we utilized both elemental Ga and Ga-suboxide as Ga precursors. Controllable and repeatable growth of β-(AlxGa1−x)2O3 with Al compositions ranging from 1% to 25% was achieved. The impurity incorporation and crystal quality of the resulting β-(AlxGa1−x)2O3 films were also studied. Using TTBAl as a gaseous precursor in h-MBE has proven to maintain stable Al supply, enabling the controlled growth of high-quality β-(AlxGa1−x)2O3 films. 

Obtaining uniform silicon concentration, especially with low concentrations (ranging from 1 × 1016 to 1 × 1018 cm−3) by molecular beam epitaxy, has been challenging due to oxidation of a silicon solid source in the oxide environment. In this work, Si doping of β-Ga2O3 (010) films by diluted disilane as the Si source is investigated using hybrid plasma-assisted molecular beam epitaxy. The impact of growth temperature, disilane source concentration, and disilane flow rate on Si incorporation was studied by secondary ion mass spectrometry. Uniform Si concentrations ranging from 3 × 1016 to 2 × 1019 cm−3 are demonstrated. Si-doped β-Ga2O3 films with different silicon concentrations were grown on Fe-doped β-Ga2O3 (010) substrates. The electron concentration and mobility were determined using van de Pauw Hall measurements. A high mobility of 135 cm2/V s was measured for an electron concentration of 3.4 × 1017 cm−3 at room temperature.